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The quasi-free-standing nature of graphene on H-saturated SiC(0001)

autor

Johannes Jobst

publicat în: Applied Physics Letters

Data de publicare: 2011-09-19

Limbă: limba engleză

Subiectul principal: Grafen

Citează articole 23

Dată

Title

Autori

2010-04

Epitaxial Graphenes on Silicon Carbide

Thomas Seyller, Joseph A Stroscio
2010-02-01

100-GHz transistors from wafer-scale epitaxial graphene

H-Y Chiu, Phaedon Avouris
2010-01-17

Towards a quantum resistance standard based on epitaxial graphene

Samuel Lara-Avila, Sergey E Kubatkin, Olga Kazakova, Vladimir Fal'ko
2010-05-25

Quantum oscillations and quantum Hall effect in epitaxial graphene

Johannes Jobst, Heiko B. Weber, Thomas Seyller
2010-02

Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties

Ulrich Kunze
2010-09-21

Automated preparation of high-quality epitaxial graphene on 6H-SiC(0001)

Thomas Seyller
2010-09-16

Deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering

Ke Zou, Xia Hong
2009-02-08

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

Johannes Jobst, Jessica L McChesney, Heiko B. Weber, Thomas Seyller, Eli Rotenberg
2009-10-26

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
2009-12-10

Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation

Camilla Coletti
2008-04-02

Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
2008-05-19

Raman spectra of epitaxial graphene on SiC(0001)
2008-03-30

Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

Simone Pisana, Konstantin Novosiolov, Andre Geim
2008-03-23

Intrinsic and extrinsic performance limits of graphene devices on SiO2.

Jian-Hao Chen
2008-01-07

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

Mikhail I. Katsnelson, Andre Geim, Konstantin Novosiolov, Daniel C. Elias, Sergey Morozov
2006-04-13

Electronic confinement and coherence in patterned epitaxial graphene.

Xiaosong Wu
2006-12-10

Quasiparticle dynamics in graphene

Thomas Seyller, Eli Rotenberg
2006-07

Interface of atomic layer deposited Al2O3on H-terminated silicon
2006-10-30

Raman spectrum of graphene and graphene layers

Michele Lazzeri, Jannik C Meyer, Vittorio Scardaci
2005-11-10

Two-dimensional gas of massless Dirac fermions in graphene

Mikhail I. Katsnelson, Andre Geim, Konstantin Novosiolov, Irina Grigorieva, Sergey Morozov
2005-11-10

Experimental observation of the quantum Hall effect and Berry's phase in graphene

Horst Ludwig Störmer, Philip Kim
2003-05-06

Synchrotron x-ray photoelectron spectroscopy study of hydrogen-terminated6H−SiC{0001}surfaces
2001-02-26

Electronic and chemical passivation of hexagonal 6H–SiC surfaces by hydrogen termination

Articol - wd:Q58485510

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